Personal profile

Boya Distinguished Professor, deputy director of State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, dean of Dongguan Institute of Optoelectronics of Peking University, leader of The Third Generation Semiconductor Materials and Devices Team of Songshan Lake Materials Laboratory, Chief scientist of the Challenge Program, Fellow of the Optical Society of America. Prof. Wang was supported by the National Science Fund for Distinguished Young Scholars in 2012, selected as the Beijing Outstanding Young Scientist in 2018, and funded by the Innovation Group Project of the Foundation Committee in 2023. Prof. Wang has presided over more than 10 projects such as National Key Research and Development Program, 863 Program, National Science Fund for Distinguished Young Scholars, National Major Scientific Instruments and Equipments Development Project of National Natural Science Foundation of China, International Exchange Fund, National Defense Challenge Program, National Defense Foundation Pre-Research, etc. So far, he has published more than 310 SCI papers, which has been cited more than 5800 times. His work has been selected as cover articles by well-known journals multiple times, and he has been invited to write four chapters in four English monographs.

Team member

The team has 10 members, including 4 senior researchers, 3 doctoral degree personnel and 2 master degree personnel (who have many years of wafer and packaging experience in well-known enterprises in the industry). The talent team covers all aspects of theoretical research, material growth and device design and assembly, which provides a strong guarantee for team research and project, providing a strong guarantee for the team research and project.

Xinqiang Wang: Professor, team leader

Weiyun Wang: Senior engineer

Ye Yuan: Associate researcher

Houjin Wang: Senior engineer

Wei Luo: Senior engineer

Jiakang Cao: Engineer

Wenting Wan: Engineer

Bo Tang: Engineer

Ruiqing Lu: Engineer

Zishan Zhang: Administrative assistant

Team Information

The team focused on third-generation semiconductor nitride materials and devices, focusing on AlN composite substrate and ALGan-based UV-LED, covering the whole industry chain structure from upstream substrate material development, midstream epitaxial chip design and preparation, to downstream device module packaging, etc. The target products have great application value in the fields of sterilization, medical treatment, pharmaceutical, UV-curing, filter and power device. At present, the team has built three major plates: AlN composite substrate preparation system, epitaxial chip design and preparation system, AlN ceramic substrate and packaging application system, and has basically solved the key technical problems of industrialization such as AlN composite substrate and epitaxial, chip and light source module of ultraviolet electrical components, and forms independent intellectual property rights. The industrialization of aluminum nitride substrate and UV-LED chips and modules has been realized, and the related products have achieved batch sales and achieved good sales.

Direction 1: Single-crystalline AlN template

1. Introduction

This project is dedicated to developing single-crystalline AlN template specifically for high-brightness LEDs, high-power electronic devices, and GHz RF filter devices. It has successfully demonstrated the application of single-crystalline AlN template in these fields, contributing to cost reduction and efficiency improvement in the industry. This direction has been granted 17 national invention patents and won the Gold Medal at the 2023 London Invention Exhibition. It has established product standards in the field of electronic and optoelectronic devices, laying a solid foundation for the application of aluminum nitride single-crystal materials. Currently, the team has established a joint engineering center with the Guangdong Zhongmin Industrial Technology Innovation Institute to continue promoting the application and industrialization of aluminum nitride single-crystal composite substrates.

2. Preparation and application of single-crystalline AlN template

(1) Preparation of Single-Crystalline AlN template

Using physical vapor deposition combined with high-temperature annealing technology, we have achieved high-quality single-crystalline AlN template of various sizes (2 to 8 inches). The crystal quality is at an advanced level, and the preparation technology is based on industrial processes, enabling stable mass production on a scale of thousands of pieces.

            

(2) The application of single-crystalline AlN template in UV-LED

The aluminum nitride deep ultraviolet single-crystal composite substrate facilitates significant cost reduction and efficiency improvement in deep ultraviolet LED devices. By reducing the thickness of the aluminum nitride buffer layer during the epitaxy process, the cost and technical barriers of subsequent growth processes are effectively lowered. Based on this technology, the team has successfully achieved the first 4-inch surface crack-free deep ultraviolet LED epitaxial wafer. This achievement seamlessly integrates the deep ultraviolet LED epitaxy process with the blue light process, significantly reducing epitaxy costs.

        

（3）The application of single-crystalline AlN template in HEMT

The excellent crystal quality of the aluminum nitride region in single-crystalline aluminum nitride template effectively reduces the epitaxial cost of GaN in the backend. Based on the single-crystalline AlN template, the team has successfully developed GaN HEMT power electronic devices with an ultra-thin buffer layer structure. This achievement not only significantly reduces the GaN buffer layer thickness (from 3-4 μm in silicon-based HEMTs to 200-300 nm) but also improves the device's breakdown voltage (over 2000 V). Currently, the aluminum nitride single-crystal composite substrate has successfully passed epitaxial verification for D-mode HEMT, E-mode HEMT, and SBD-type power devices.

（4）Application of single-crystalline AlN template in High-Frequency MEMS Devices

Based on high quality a-plane single-crystalline AlN template, the team has achieved a surface acoustic wave excitation with a quality factor of up to 2458 at a frequency of 2.38 GHz using only interdigital electrodes. This technology is effectively applicable to 2.4 GHz RF filtering communications. Additionally, the resonator has for the first time achieved transverse bulk acoustic wave excitation at 4 GHz using only planar interdigital electrodes. This achievement will play a crucial role in advancing low-cost, high-frequency RF communication technologies.

   

Direction 2: AlGaN-based UV-LED

1. Introduction

This project aims to develop high-power UV-LED (250~340 nm) for disinfection, biomedical and pharmaceutical, and industrial curing by optimizing material growth, doping technology, device structure and chip preparation process based on high-quality substrate and MOCVD equipment. Using integrated design, heat dissipation design, light distribution design and packaging technology of the light source module, high power density ultraviolet LED integrated light source module was demonstrated and in mass production, and its application scenarios is under further development.

2. Preparation and application of AlGaN-based UV-LED light source

(1) AlGaN-based UV-LED wafer and chip

At present, the team has mastered the core technology of the epitaxy growth of high-quality AlN single crystal materials on flat sapphire substrate and nano-patterned sapphire substrate (NPSS). On this basis, high-performance AlGaN-based UV-LED wafer was prepared after solving a series of problems such as large warpage, multiple cracks, large compression stress, high voltage, large leakage current, and nonuniform light output. The mass production of 2-inch and 4-inch UV-LED epitaxial wafer was achieved, and the central luminous wavelengths covered multiple bands such as 265nm, 275 nm, 295 nm, 308 nm, 325 nm and 340 nm. Based on the excellent UV-LED epitaxial film, the developed UV-LED chip also has excellent performance. It has achieved mass sales, and has been widely recognized by downstream customers.

            

（2）UV-LED integrated light source and air sterilization module

Through integrated circuit design, heat dissipation design and inorganic packaging technology, reliable and stable UV-LED integrated light source module with high power density was achieved. The UVC-LED integrated light source with light output wavelength of 275nm has an irradiance of more than 100 mW/cm2 on the luminous surface, and the UV output power covers 100~2000mW. It was verified by third-party institutions to be able to kill more than 99.9% of a variety of common pathogens and novel coronavirus within one second. Based on this, the UV-LED air sterilization application module has been further developed, which has been verified by third-party institutions and can achieve more than 99.9% efficient killing of Staphylococcus alba and H1N1 virus within 20 cubic meters of space within 30 minutes.

    

Direction 3: AlN ceramic substrate package

1. Introduction

Aiming at high-power photoelectronic devices with high thermal yield, the team carried out research on high-thermal and high-insulation AlN ceramic substrate packaging materials, combined with traditional inorganic material packaging, to improve the heat dissipation capacity of UV-LED devices from the device level, reduce the aging rate of packaging materials and devices, and promote the industrialization of high-power UV-LED devices. At the same time, the application of AlN ceramic substrate in other high-power devices is further developed.​

2. Research direction

The team have achieved all-inorganic packaging substrates and devices with high thermal conductivity, low thermal expansion for UV-LED device, which usually have high heat dissipation requirements. The research contents include: 1) To realize the deposition of metal electrodes on the surface of high thermal conductivity AlN ceramics, improve the wettability of AlN surface and the bonding force of metal film by modifying the morphology of the ceramic surface and optimizing the sputtering coating process. 2) Study the electroplating process of the ceramic hole with high depth to diameter ratio, and realize the vertical conductivity interconnection of the packaging substrate. 3) Develop the dam enclosure and light lens suitable for inorganic packaging, reduce the thermal expansion mismatch between various components through the optimization of materials and structures, and improve the reliability of the device. 4) Develop UV-LED integrated light source with ultra-high optical power output by optimizing the overall heat dissipation channel and optical output efficiency of the device. At present, we have developed a series of products such as inorganic packaging substrates with ceramic dam structure, high-power lighting packaging substrates and aluminum nitride packaging substrates for integrated UV-LED light source.

    

Achievement transformation

1、Intellectual property rights

The team have been authorized 22 invention patents and 13 utility model patents.

2. Developed products

At present, we have completed the development of 4 kinds of AlN substrates (2 to 6 inch), 6 kinds of wavelength UV-LED epitaxial sheets (2 to 4 inch) and chips (including 1020mil², 2020mil², 4040mil² and etc.), 2 kinds of UV-LED integrated light sources and their application scenarios, and 3 kinds of high thermal conductivity AlN ceramic substrates (can be customized).

3. Project support

Team members have undertaken a total of 9 projects at the national, provincial and municipal levels, and 3 projects from enterprises, with a total fund of 8.9695 million yuan.

4、Awards

（1）The 9th China Innovation and Entrepreneurship Competition SME Integration professional competition 2020 Songshan Lake Innovation and Entrepreneurship Competition Finals second prize

（2）London, England in 2023 invention exhibition gold award

（3）The first prize of Maker Group in the seventh Maker Innovation and Entrepreneurship Competition in Dongguan, Guangdong in 2023

5、Industrialization

On August 20, 2020, the team established an industrialization company, SinoVio Semiconductor Technology (Dongguan) Co., LTD. (https://www.sino-vio.com/en/). The company's business involves the development, manufacturing and sales of high quality aluminum nitride composite substrates, UV-LED epitaxial wafers, UV-LED chips and high thermal conductivity aluminum nitride ceramic substrates. The company's business scope includes semiconductor materials, electronic devices, optoelectronic devices and semiconductor products research and development, production, processing, consulting, testing, sales, technology transfer and technical services; rent of manufacturing equipment and testing equipment for semiconductor materials and devices; import and export of goods or technology, etc.